EBIC and IRBIC investigations of diffusion length inhomogeneities in deformed and annealed silicon

机译：变形和退火硅中扩散长度非均匀性的EBIC和IRBIC研究

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The dependence of IRBIC contrast of dislocations in deformed silicon on generation rate and energy of quenching light is obtained. The recombination properties inside and outside the Read cylinder have been separately studied for such dislocations.

机译：得到了变形硅中位错的IRBIC对比度与猝灭光的产生速率和能量的关系。已针对此类位错分别研究了Read圆柱体内部和外部的重组特性。

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来源
《Defect recognition and image processing in semiconductors and devices》|1993年|221-224|共4页
会议地点 Santander(ES);Santander(ES)
作者
I.Bondarenko; A.Castaldini; A.Cavallini;
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作者单位

Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka Moscow distr., Russia;

Department of Physics, University of Bologna, Via Irnerio 46, Bologna, Italy;

Department of Physics, University of Bologna, Via Irnerio 46, Bologna, Italy;

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原文格式 PDF
正文语种 eng
中图分类硅酸盐工业;无机质材料;
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1. SEM-EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing [J] . E. B. Yakimov, V. V. Privezentsev Journal of materials science . 2008,第suppla1期

机译：高温扩散退火过程中锌补偿的硅的SEM-EBIC研究
2. EBIC technique applied to polycrystalline silicon thin films: minority carrier diffusion length improvement by hydrogenation [J] . D. Ballutaud, A. Riviere, M. Rusu Thin Solid Films . 2002,第期

机译：EBIC技术应用于多晶硅薄膜：通过氢化提高少数载流子扩散长度
3. Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy [J] . Min-Hao Hong, Chun-Wei Chang, Dung-Ching Perng, AIP Advances . 2012,第3期

机译：多波长拉曼光谱在快速热退火过程中非接触监测硅衬底上掺硼外延Si1-xGex双层中Ge和B的扩散
4. EBIC and IRBIC investigations of diffusion length inhomogeneities in deformed and annealed silicon [C] . International conference on Defect recognition and image processing in semiconductors and devices . 1994

机译：EBIC和IRBIC对变形和退火硅的扩散长度不均匀性的研究
5. Aluminum gettering of crystalline silicon for improvement of minority carrier diffusion length and for studies of fundamental diffusion mechanisms. [D] . Joshi, Subhash Mukund. 2000

机译：晶体硅的铝吸杂剂可改善少数载流子扩散长度并用于基本扩散机理的研究。
6. Investigation of diffusion length distribution on polycrystalline silicon wafers viaphotoluminescence methods [O] . Shishu Lou, Huishi Zhu, Shaoxu Hu, -1

机译：多晶硅片上扩散长度分布的通孔研究光致发光方法
7. Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy [O] . Min-Hao Hong, Chun-Wei Chang, Dung-Ching Perng, 2012

机译：通过多波长拉曼光谱在快速热退火过程中非接触式监测硅衬底上B掺杂外延si1-xGex双层中的Ge和B扩散
8. The use of multiple EBIC curves and low voltage electron microscopy in the measurement of small diffusion lengths [R] . Leon, R. P. 1987

机译：在测量小扩散长度时使用多个EBIC曲线和低压电子显微镜

EBIC and IRBIC investigations of diffusion length inhomogeneities in deformed and annealed silicon

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