Analysis of thickness homogeneity and absorption coefficients of thin silicide films by microRaman spectroscopy

摘要

The thickness uniformity and absorption coefficient of thin polycrystalline and epitaxial CoSi_2 layers have been analyzed by MicroRaman Spectroscopy measurements, and correlated to thickness measurements done by Rutherford Backscattering Spectroscopy (RBS). The results obtained point out the dependence of thickness homogeneity on the processing parameters. The analysis performed shows the ability of MicroRaman spectroscopy for the non destructive and quick evaluation of these layers. These features give interest to this technique for the on-line characterization of this kind of materials.