Complementary study of indentation-induced dislocations in GaAs and InP by photoetching, SEM, SPL and EBIC

摘要

Four high spatial resolution techniques (DSL, SEM, SPL, EBIC) turned out to be effective in mapping individual α and β dislocations induced by micro-indentation in LEC GaAs and InP. A one-to-one correlation between all these methods is demonstrated. Surface profiling and SEM imaging showed that α and β dislocations exhibit a different behaviour upon DSL etching. The possible reason for such behaviour is explained in terms of the different core structure of the α and β dislocations. On the basis of DSL etch features on the indentation rosettes the mechanisms of dislocation motion are discussed.