Evaluation of localized area epitaxy by spectrally resolved scanning photoluminescence

摘要

In this contribution, room temperature spectrally resolved scanning photoluminescence technique with high spatial resolution (< 1μm) is introduced and applied to control the uniformity of the composition and of the thickness of quantum well (Q.W.) structures obtained by localized area epitaxy. Furthermore, this technique is applied here to study lateral uniformity of Q.W. InGaAs/InP heterostructures grown by localized area Gas Source Molecular Beam Epitaxy (GSMBE) at various conditions (temperature, Arsine flow rate) and as a function of stripe width and spacing.