LIGHT SCATTERING TOMOGRAPHY STUDY OF LATTICE DEFECTS IN HIGH QUALITY AS-GROWN CZ SILICON WAFERS AND THEIR EVOLUTION DURING GATE OXIDATION

摘要

Wafers from silicon ingots grown in the vacancy rich regime with different crystal cooling rates have been used for investigations by infrared light scattering tomography (IR-LST), preferential defect etching and gate oxide integrity (GOI) tests. GOI evaluation was done for 6.4 nm and 15 nm gate oxides. A clear correlation is obtained between substrate defects observed by LST and Secco etching after gate oxidation and GOI. In a second experiment the effect of intentional contamination with 10~(12) Fe cm~(-2) before gate oxidation is evaluated.