Study on defects in CZ-Si crystals grown by normal, cusp magnetic field and electromagnetic field techniques using multi-chroic infrared light scattering tomography

摘要

Three different Czochralski (CZ) techniques, refered to as normal, cusp magnetidic field (CMF) and electromagnetic field (EMF) methods, were used to CZ-Si crystals, respectively. The behavior of defects in these grown CZ-Si crystals was systematically invstigated by a new defect detectin method of multi-chroic infrared light scattering tomogrpahy. Research results showed that the defect density and its distribution in three types of CZ-Si crystal were obvisously different due to the different physical conditions, such as molten silicon flow in the crucible and temperature fluctuation in the melt during the crystal growth.