首页> 外国专利> APPARATUS AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR SINGLE CRYSTAL AN INGOT USING CUSP MAGNETIC FIELD, USING CUSP MAGNETIC FIELD TO INCREASE THE PULL RATE OF SINGLE CRYSTAL WITHOUT A DEFECT

APPARATUS AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR SINGLE CRYSTAL AN INGOT USING CUSP MAGNETIC FIELD, USING CUSP MAGNETIC FIELD TO INCREASE THE PULL RATE OF SINGLE CRYSTAL WITHOUT A DEFECT

机译:利用杯形磁场制造半导体单晶硅的装置和方法,利用杯形磁场提高单晶晶体的无缺陷拉动速率

摘要

PURPOSE: An apparatus and a method for manufacturing a semiconductor single crystal an ingot using cusp magnetic field are provided to improve the productively of single crystal by securing a process margin.;CONSTITUTION: A semiconductor single crystal ingot manufacturing device comprises magnetic field supply unites(80a, 80b). The magnetic field supply unites are arranged near a crucible(10). The magnetic field supply unites have the center of ZGP(Zero Gauss Plane) of -30mm ~ 60mm in relation to the high level interface. In this case, the central location of ZGP has the vertical component of the magnetic field of 0. The magnetic field supply unites applies a CUSP magnetic field having a R over 1.;COPYRIGHT KIPO 2010
机译:目的:提供一种利用尖峰磁场制造半导体单晶锭的装置和方法,以通过确保工艺余量来提高单晶的生产率。;构成:一种半导体单晶锭制造装置,包括磁场供应单元( 80a,80b)。磁场供应单元布置在坩埚(10)附近。磁场供应单元的ZGP(零高斯平面)的中心相对于高级界面的中心为-30mm〜60mm。在这种情况下,ZGP的中心位置的垂直磁场分量为0。磁场提供单元施加的R大于1的CUSP磁场; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100015251A

    专利类型

  • 公开/公告日2010-02-12

    原文格式PDF

  • 申请/专利权人 SILTRON INC.;

    申请/专利号KR20080076207

  • 申请日2008-08-04

  • 分类号C30B15/00;H01L21/20;

  • 国家 KR

  • 入库时间 2022-08-21 18:33:22

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