Imaging of the Si-Buried Oxide Interface Charges by Surface Photovoltage for the SOI CMOS Applications

摘要

Surface Photovoltage has been employed to image the distribution of charges at the Si - buried oxide interface in Si-on-Insulator wafers. Substrates fabricated by oxygen ion implantation and wafer bond and etchback have been compared. Oxygen implanted wafers exhibited larger and less uniformly distributed interfacial charges than bonded wafers with comparable buried oxide thicknesses. Interfacial charges were stable at temperatures below the 1000℃.