Impurity segregation in Al doped GaSb studied by cathodoluminescence microscopy

摘要

Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native acceptors and on the general structure of extended defects of gallium antimonide single crystals. While there is no significant change in th native defect content, decoration of non-radiative recombination centers or extended defects occurs as a result of aluminum doping.