Electrical properties of iron-related defects in CZ- and FZ-grown n-type silicon

摘要

Electrical properties of iron-related defects (IRD) introduced in n-type floating zoned (FZ) and Czochralski (CZ)-grown silicon are studied by deep level transient spectroscopy and Hall effect. Electrically active IRD have been observed for the first time in n-type CZ silicon. Enthalpy and entropy factors of electron emission rate of IRD are equivalent between those observed in CZ and FZ silicon. In-diffusion process at 1160 deg and isothermal annealing process at 150 deg also indicate the identical nature of IRD between CZ and FZ silicon, which can be understood in terms of the consecutive progress of iron-related complex- formation reactions including interstitial iron atoms (Fe_i) in the silicon crystal. The IRD is independent of oxygen and phosphorus atoms. Only a small fraction of Fe_i forms electrically ionizable complexes.