Iron-related defect model in n-type silicon based on the electrical and diffusion properties

摘要

We review the electrical and diffusion properties of iron-related electrically active defects (IRDs) in floating zoned (FZ) and Czochralski (CZ)-grown n-type silicon. A small fraction of iron atoms dissolved into n-type silicon forms electrically active IRDs. From in-diffusion and annealing properties, IRDs can be related to interstitial iron atoms independent of phosphorus, oxygen and hydrogen atoms. We propose a model that IRDs observed in the present study are due to intermediate states in consecutive reactions of iron-related complex formation process. IRDs observed in CZ and FZ n-type silicon are identical.