Highly efficient nitrogen doping into GaAs using low-energy nitrogen molecular ions

摘要

Low-energy N_2~+ molecular-ions were irradiated during the epitaxial growth of GaAs. Ion acceleration energy and ion beam current density were varied in the range of 30-200 eV and 3-37 nA/cm~2, respectively. GaAs growth rate was kept constant at 1 #mu#m/h and the thickness of N-doped GaAs layer was about 1 #mu#n, N concentration was obtained by using secondary ion mass spectroscopy. Strong N-related emissions were observed in the low-temperature photoluminecence spectra, which indicates that N atom is efficiently substituted at As site and is optically active as an isoelectronic impurity.