首页> 外国专利> - - PREAPARATION METHOD OF NITROGEN DOPED CARBON-SILICON COMPLEX AND NITROGEN DOPED CARBON SILICON COMPLEX PREPARED BY THE SAME

- - PREAPARATION METHOD OF NITROGEN DOPED CARBON-SILICON COMPLEX AND NITROGEN DOPED CARBON SILICON COMPLEX PREPARED BY THE SAME

机译:用相同的方法制备氮掺杂碳硅复合物和氮掺杂碳硅复合物的方法

摘要

The present invention relates to a method for preparing a nitrogen doped carbon-silicon composite and a nitrogen doped carbon-silicon composite produced thereby. According to the method for preparing the nitrogen-doped carbon-silicon composite of the present invention, since the composite is formed through the eutectic mixture state, it is possible to prepare a carbon-silicon composite in which silicon is uniformly dispersed in the nitrogen-doped graphite carbon continuous phase. In addition, the nitrogen-doped carbon-silicon composite thus prepared has excellent electrical conductivity, strength, and capacity retention, and thus may be used as a negative electrode active material of a lithium secondary battery.
机译:本发明涉及一种制备氮掺杂的碳-硅复合材料的方法以及由此制备的氮掺杂的碳-硅复合材料。根据本发明的氮掺杂碳-硅复合材料的制备方法,由于该复合材料是通过共晶混合物状态形成的,因此可以制备其中硅均匀分散在氮-碳中的碳-硅复合材料。掺杂石墨碳连续相。另外,如此制备的氮掺杂碳-硅复合材料具有优异的导电性,强度和容量保持性,因此可以用作锂二次电池的负极活性材料。

著录项

  • 公开/公告号KR102050835B1

    专利类型

  • 公开/公告日2019-12-02

    原文格式PDF

  • 申请/专利权人 주식회사 엘지화학;

    申请/专利号KR20160048524

  • 发明设计人 황의용;양지혜;

    申请日2016-04-21

  • 分类号C01B31/02;C01B33/02;C01B33/113;H01M10/0525;H01M4/13;H01M4/36;

  • 国家 KR

  • 入库时间 2022-08-21 11:08:20

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