A novel detcction system for defects and chemical contamination in semiconductors based upon the scanning kelvin probe

摘要

A novel wafer scale detection systemfor defects and chemical contamination in semiconductors based upon the Scanning Kelvin Probe (SKP) is presented. It incorporates traditional work function (wf) topography with high resolution (<0.1 meV). Surface Photovoltage (SPV) measurement and the acquisition of SPV transients with time constants down to 1#mu#s.This permits quasi-simulataneous determination of surface charge, surface barrier height and bulk minority carier lifetime. Monitoring variations of these parameters after chemical treatments give an accurate indication of the location and amount of contamination.