Ion yield, sputter rate, and SIMS matrix effects in quantitative analysis of (Al_xGa_(1-x))_(0.5)N_(0.5)

摘要

Aluminum gallium nitride (AlGaN) material is used in GaN-based electronic and optoelectonic devices. The Al and Ga ratio can be adjusted to produce material with different compositions and electronic properties. In this set of experiments epitaxial films of (Al_XGa_(1-X)_(0.50)N_(0.50) with x ranging from 0 to 1 were investigated. Primary composition was determined with Rutherford backscattering spectrometry (RBS). From secondary ion mass spectrometry (SIMS) profiles a correlation of secondary ion counts was made to RBS determinations of primary composition. The SIMS data was also used to determine sputter rate and the relative sensitivity factor (RSF) of O, Mg and Si in (Al_XGa_(1-X))_(0.5)N_(0.5) material. The correlation of SIMS data with RBS and knowledge of the sputter rate and RSF dependence on coposition are esential for the characterization of (Al_XGa_(1-X))_(0.5)N_(0.5) films.