In this contribution we present a study aimed at comparing results of positron-lifetime and Doppler-broadening measurements onthe wide-band-gap compound semiconductors ZnS, ZnSe, and ZnTe. To investigate the basic properties of intrinsic and radiationinduced defects the samples were irradiated either with 3 MeV protons or 1 MeV electrons. The isochronal annealing was performed in an Ar atmosphere. It was found that electron and proton irradiation cause different changes in the positron annihilation characteristics. Several annealing stages were observed, related to the annealing of variously sized vacancy complexes.
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