PROPAGATION OF NONEQUILIBRIUM ACOUSTIC PHONONS IN DIAMOND, II-VI COMPOUNDS, AND SILICON WITH QUANTUM WELLS. SCATTERING OF PHONONS BY EMBEDDED LAYERS AND EXTENDED DEFECTS

摘要

The knowledge of such microscopic parameters of acoustic phonons as mean free paths is necessary both for the fundamental characterization of material and for its applications. The propagation of the nonequilibrium acoustic phonons of terahertz frequencies in diamond with ion-implanted layers, single- and polycrystalline ZnTe, and in silicon with quantum wells was studied.