Correlation Analysis: A Fast and Reliable Method for a Better Understanding of Simulation Models in Optical Lithography

摘要

Nowadays, the advanced usage of simulation tools for optical lithography requires substantial knowledge about the impact of model parameters and process conditions on simulation results. In many cases up to 30 or 40 parameters have to be tuned for different experimental data in order to obtain reliable simulation results. Consequently, the investigation of the impact of all model and process parameters on simulation results can be very time consuming. Therefore, we applied a correlation analysis, a well known statistical method, that allows a sensitivity analysis of simulation parameters. We compared the results of the sensitivity analysis method with the outcome of a standard "one-factor-at-a-time-method" and discuss the advantages and disadvantages of both methodologies, A calibrated ArF photoresist model has been examined with both sensitivity analysis methods.