InGaAs/InGaAsP quantum well infrared photodetector array operating at 1.5 μm wavelength

摘要

An InGaAs/InGaAsP multiple quantum well (MQW) infrared photodetector array was fabricated on an InP substrate. This paper describes the fabrication and performance characteristics of four and seven pin photodiode element photodetector arrays suitable for 1.3-1.7 μm wavelength applications. The average responsivity achieved was 7mA/W at 150 nm when the bias voltage was -3V. The minimum dark current is 15 μA at -3V for a device area of 0.05mm².