Analysis of the modulation response of 1.3μm strained InAsP lasers

摘要

In this paper we analyze the frequency response of 1.3μm highly strained InAsP/InGaAsP MQW lasers under small signal conditions. We show that in these lasers, electrical parasitics limit the high frequency response. These parasitics which are inherent to the laser structure, show an inductance-like behavior as determined from impedance measurements. We further show that the effect of the parasitic inductance in the laser modulation response can be significantly reduced by modifying the laser driving circuit.