Growth of zinc oxide thin films on (400) Si by plasma-molecular beam epitaxy

摘要

ZnO thin films have been grown on a (400) Si substrate by plasma-molecular beam epitaxy (P-MBE). The sample was characterized by X-ray diffraction (XRD) and photoluminescence (PL). X-ray diffraction result exhibits a strong (002) diffraction peak of ZnO thin film. In PL spectra, a dominant ultraviolet light (UL) emission at 3.265eV is observed at room temperature (RT). According to the energy position of the UL emission, this luminescence at RT was considered to be related to exciton recombination. The samples were annealed in oxygen for two hours at different temperatures, XRD shows the improvement of crystal quality with increasing annealing temperature.