METHOD FOR FORMING ZINC OXIDE THIN FILM, ZINC OXIDE THIN FILM PROVIDED BY THE SAME, SEMICONDUCTOR ELEMENT USING THE ZINC OXIDE THIN FILM, AND DEVICE FOR FORMING THE ZIND OXIDE THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide: a method for forming a zinc oxide thin film capable of providing a zinc oxide thin film having a crystallite size equal to or larger than that in the case where a bias is not applied even when an oxygen flow rate is increased by including oxygen in a sputtering gas; a zinc oxide thin film provided by the same; a semiconductor element using the zinc oxide thin film; and a device for forming the zinc oxide thin film.;SOLUTION: In this method for forming the zinc oxide thin film, the zinc oxide thin film is formed on a substrate by carrying out sputtering by using a zinc oxide target in an atmosphere containing the sputtering gas comprising oxygen and an inactive gas, and the thin film is formed while applying a pulse bias to the substrate.;COPYRIGHT: (C)2010,JPO&INPIT