首页> 外文会议>Conference on Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technogoy Areas Jan 21-22, 2003 Santa Clara, California, USA >300 W XeCl Excimer Laser Annealing and Sequential Lateral Solidification in Low Temperature Poly Silicon Technology
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300 W XeCl Excimer Laser Annealing and Sequential Lateral Solidification in Low Temperature Poly Silicon Technology

机译:低温多晶硅技术中的300 W XeCl受激准分子激光退火和顺序横向凝固

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Industrial production of low temperature p-Si back plates for LCDs by high power excimer laser annealing was introduced several years ago. Regarding the economy of the process, one of the major advantages of excimer laser annealing is the opportunity to make use of low cost glass substrates due to the low temperature of the annealing process. The Lambda Physik high power excimer laser series are operated with the MicroLas 370 mm line beam optics, integrated by Japan Steel Works into industrial systems. The MicroLas line beam optics for conventional excimer laser annealing (ELA) process converts the raw laser beam profile into a stable and homogeneous rectangular illumination field with high aspect ratio. The excimer laser light source, the LAMBDA STEEL 1000, delivers stabilized pulse energies up to 1 Joule at repetition rates up to 300Hz. The crystallization using excimer lasers allows to produce films with electron mobility of 100-150 cm~2/Vsec with the Line beam technique. The new SLS-method, which is currently under industrial investigation, even allows to obtain electron mobility between 200-400 cm~2/Vsec.
机译:几年前,通过大功率准分子激光退火技术对LCD的低温p-Si背板进行了工业生产。关于工艺的经济性,准分子激光退火的主要优点之一是由于退火工艺的低温而有机会利用低成本的玻璃基板。 Lambda Physik高功率准分子激光器系列使用MicroLas 370毫米线束光学器件运行,该器件由Japan Steel Works集成到工业系统中。用于传统受激准分子激光退火(ELA)工艺的MicroLas线束光学器件将原始激光束轮廓转换为具有高纵横比的稳定且均匀的矩形照明场。准分子激光光源LAMBDA STEEL 1000以高达300Hz的重复频率提供高达1焦耳的稳定脉冲能量。使用准分子激光器的结晶允许使用线束技术生产具有100-150 cm〜2 / Vsec电子迁移率的薄膜。目前正在工业研究中的新的SLS方法甚至允许获得200-400 cm〜2 / Vsec的电子迁移率。

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