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300 W XeCl Excimer Laser Annealing and Sequential Lateral Solidification in Low Temperature Poly Silicon Technology

机译：低温多晶硅技术中300 W XeCl准分子激光退火和顺序侧向凝固

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Hans-jürgen Kahlertb; Burkhard Fechnerc; Ulrich Rebhana; Rustem Osmanowa;
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年度 2014
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1. In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown poly crystalline silicon: influence of metal diffusion on the film morphology and on the growth rate [J] . S. Loreti, A. Santoni, J. Lancok, Thin Solid Films . 2004,第1a2期

机译：低温低压化学气相沉积生长多晶硅的原位准分子激光退火：金属扩散对薄膜形貌和生长速率的影响
2. THE STUDY OF SILICON FILMS OBTAINED BY SEQUENTIAL LATERAL SOLIDIFICATION BY MEANS OF A 3-KHZ EXCIMER LASER WITH A SHEETLIKE BEAM [J] . A.B.LIMANOV, V.A.CHUBARENKO, V.M.BORISOV Russian Microelectronics . 1999,第1期

机译：3KHZ准分子激光束形梁的顺序横向凝固获得硅膜的研究
3. Crystal growth of low-temperature processed poly-Si by excimer laser annealing - dependences of poly-Si grain on energy density and shot number [J] . Naoto Matsuo, Naoya Kawamoto, Ryouhei Taguchi, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2000,第152期

机译：准分子激光退火在低温处理的多晶硅中的晶体生长-多晶硅晶粒与能量密度和发射数量的关系
4. 300 W XeCl Excimer Laser Annealing and Sequential Lateral Solidification in Low Temperature Poly Silicon Technology [C] . Ludolf Herbst, Hans-Juergen Kahlert, Burkhard Fechner, Conference on Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technogoy Areas Jan 21-22, 2003 Santa Clara, California, USA . 2003

机译：低温多晶硅技术中的300 W XeCl受激准分子激光退火和顺序横向凝固
5. Low-temperature silicon thin films for large-area electronics: Device fabrication using soft lithography and laser-crystallization by sequential lateral solidification. [D] . Jin, Hyun-Chul. 2001

机译：适用于大面积电子设备的低温硅薄膜：使用软光刻和通过顺序横向固化进行激光结晶的器件制造。
6. Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation [O] . Kunsik An, Ho-Nyun Lee, Kwan Hyun Cho, 2020

机译：193 nm ArF受激准分子激光在激光辅助等离子体增强SiNx的化学气相沉积中的作用以进行低温薄膜封装
7. Excimer‐laser annealing for low‐temperature poly‐Si TFTs [O] . Hyun Jae Kim 2003

机译：用于低温多Si TFT的准分子激光退火

300 W XeCl Excimer Laser Annealing and Sequential Lateral Solidification in Low Temperature Poly Silicon Technology

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