Excimer and femtosecond pulsed laser induced forward transfer process of metal thin film

摘要

The investigation of laser induced forward transfer (LIFT) process using femtosecond pulsed laser comparing with that using excimer laser is reported. Ni thin film of several hundreds of nanometer thickness, which is deposited on fused silica substrate, was irradiated by single pulse of KrF excimer laser (wavelength: 248nm, pulse width: 30ns) or femtosecond pulsed laser (wavelength: 800nm, pulse width: 120fs), and transferred to a Si acceptor substrate. It is shown that laser beam profile affected the removal of thin film. It is revealed that adhesion of particles was inhibited using femtosecond pulsed laser in comparison with the case of excimer LIFT process.