首页> 外文会议>Conference on Photon Processing in Microelectronics and Photonics; 20080121-24; San Jose,CA(US) >Temporal and spectral analysis of laser induced plasma in the ablation process of flexible printed circuit board
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Temporal and spectral analysis of laser induced plasma in the ablation process of flexible printed circuit board

机译:柔性印刷电路板烧蚀过程中激光诱导等离子体的时间和光谱分析

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Flexible printed circuit board (FPCB), consisting of copper sheets laminated onto non conductive film substrates with multiple structures, are core elements in electronics with their flexibility and capability of high density 3 dimensional wiring characteristics. In laser applied FPCB processing, a better understanding of the ablation mechanism leads to precision control of the depth processing especially by monitoring of the material transition layer. For this purpose, here we investigate the temporal and spectral behavior of the plasma plum generated on the single sided structure of FPCB using the technique of laser induced breakdown spectroscopy (LIBS). Using KrF excimer laser, the characteristic spectral emission lines of C_2 swan band at the wavelength of 516.5 nm and neutral copper at the wavelength range from 510 nm to 522 nm are acquired under ambient pressure in the ablation process of polyimide film and copper coated layer respectively. From a time delay from 50 ns to 4.05 μs from the beginning of the laser pulse, the temporal profiles of the spectral intensity are obtained in steps of 200 ns, which have a tendency of exponential decrease on both C_2 and neutral copper. In particular, we concentrate our attention on the temporal intensity behavior of the Bremsstrahlung continuum emission that decides the proper set of detection time window, by which the monitoring sensitivity of LIBS is determined. Finally, using the information of the temporal analysis for each molecular, atomic, and continuum emission, the transition layer between polyimide and copper film is distinguished by their characteristic peak information.
机译:柔性印刷电路板(FPCB)由层压到具有多种结构的非导电膜基板上的铜片组成,是电子产品中的核心元素,具有柔性和高密度3维布线特性。在激光施加的FPCB处理中,对烧蚀机理的更好理解特别是通过监视材料过渡层来精确控制深度处理。为此,在这里我们使用激光诱导击穿光谱技术(LIBS)研究在FPCB单面结构上产生的等离子体李子的时间和光谱行为。使用KrF准分子激光,在环境压力下分别在聚酰亚胺膜和铜涂层的烧蚀过程中,获得516.5 nm波长的C_2天鹅带和510 nm至522 nm波长范围的中性铜的特征光谱发射线。 。从激光脉冲开始到从50 ns到4.05μs的时间延迟,以200 ns的步长获得光谱强度的时间分布,这在C_2和中性铜上都有指数下降的趋势。特别是,我们将注意力集中在the致辐射连续体发射的时间强度行为上,该行为决定了正确的检测时间窗口集,由此确定了LIBS的监测灵敏度。最后,利用每个分子,原子和连续体发射的时间分析信息,聚酰亚胺和铜膜之间的过渡层通过其特征峰信息来区分。

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