Integration Using KrF and ArF Resist Materials in a Full Via First Dual Damascene Process Scheme with CVD OSG Low-k Dielectric

摘要

Using a full via first (FVF) dual damascene (DD) scheme for copper processing with low-k dielectrics has presented many new challenges to the semiconductor industry. Among those challenges, for photolithography, resist poisoning at the trench level has been the most daunting. Resist and bottom anti-reflective coating (BARC) screenings for poisoning at the 0.13μm and 0.10μm technology nodes have been performed on a variety of KrF and ArF resist and BARC platforms using a simple semi-qualitative method. By varying resist parameters such as resin, photoacid generator (PAG), and solvent types, a lithographically suitable KrF resist is found for the 0.13μm node with minimal sensitivity to poisoning. In addition, ArF resists and BARCs were screened for their sensitivity to poisoning for the 0.10μm node. Suitable resist and BARC candidates are identified for preliminary use for the 0.10μm node.