Thermal Annealing Effect on InGaAsN/GaAs lasers

摘要

Before processing the LaGaAsN/GaAs edge emitting lasers, post-growth rapid thermal annealing (RTA) was applied on the wafer. Different RTA results in different threshold current density (J_(th)). RTA at 720 ℃ reduces the J_(th), significantly but keeps the linear fit slope of J_(th) vs 1/L (L is the cavity length). It indicates that RTA at 720 ℃ can decrease the absorption losses. High temperature RTA at 890 ℃ can dramatically decrease the linear fit slope, which indicates that the carrier conductivity is improved dramatically even the RTA tune is only one second.