Optimization of double barrier doped heterostructure AlGaAs/GaAs/AlGaAs/GaAs for ultra high frequency FET

摘要

The conductivity and Hall mobility have been measured in heterostructures with quantum well (QW) as functions of temperature and the QW width. If a tunnel-transparent barrier is inserted in the middle of a QW, the mobility increases in narrow wells and decreases in wide wells. The experimental data have been compared with the calculated dependences. It has been shown that the number of filled quantum well subbands depends on the well width and the presence of a barrier.