Solid-State Lighting and Display Center, Materials Department University of California, Santa Barbara, CA 93106, U.S.A.;
ultraviolet light source; light-emitting diode; LED; AlGaN/GaN quantum wells; numerical simulation;
机译:基于AlGaN的深紫外发光二极管的p-EBL / p-AlGaN / p-GaN结构的极化效应
机译:具有嵌入式多孔AlGaN分布式布拉格反射器的GaN / AlGaN紫外发光二极管
机译:GaN / AlGaN /溅射ALN成核层对GaN基紫外发光二极管性能的影响
机译:AlGaN / GaN紫外线发光二极管的3D仿真与分析
机译:蓝宝石上准晶和准准晶AlGaN基深紫外发光二极管的设计,制造和表征
机译:GaN / AlGaN /溅射AlN成核层对GaN基紫外发光二极管性能的影响
机译:alGaN / GaN紫外发光二极管的三维仿真与分析
机译:Nichia alGaN / InGaN / GaN蓝色发光二极管的寿命试验