Optimization of plasma-deposited silicon oxinitride films for interferometric MOEMS applications

摘要

In view of applications of SiO_xN_y thin films in MOEMS technology, a study the optomechanical characteristics of this material PECVD deposited are investigated. To optimize the quality of SiO_xN_y layers we establish the relationship between the chemical properties, optical performances, micromechanical stress, and growth parameters of deposited films. To use the SiO_xN_y thin film for the core layer of a strip-loaded waveguide, we propose preparation conditions of SiO_xN_y that offers a low-loss optical waveguide with well-controlled refractive index, based on a low-internal stress multilayer structure.