Analysis on oscillation wavelength of one-facet antireflection-coated semiconductor lasers

摘要

Wavelength dependence and finite band width of refectivity at the Ar-coated facet have been taken into account to study the oscillation wavelength and threshold carrier density of one-fact antireflection semiconductor lasers. Analytic expressions for both the upper bound of the threshold carrier density and oscillation wavelength have been derived. Analysis shows the deviation between the wavelength of the AR-coated facet minimum reflectivity and that of the gain peak is a key parameter to reduce the Fabry-Perot oscillations.