Abstract: Thin films of pure and silver doped zinc telluride were deposited on well-cleaned Corning glass substrates maintained at temperatures in the range 303 - 598 K by the vacuum evaporation method. The electrical conductivity of the pure films decreased from 1.1 $MUL 10$+$MIN@5$/ to 4.4 $MUL 10$+$MIN@6$/ ohm$+$MIN@1$/ cm$+$MIN@1$/ with the deposition temperature. The activation energy in the high temperature region was 0.33 eV, while at low temperatures it was 0.06 eV above the valence band. In the Ag doped films, the conductivity increased one order of magnitude. The optical band gap reduced from 2.23 eV to 2.18 eV with the Ag doping content.!6
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机译：摘要：通过真空蒸发法将纯净的和掺杂银的碲化锌薄膜沉积在清洁良好的康宁玻璃基板上，该基板保持在303-598 K的温度范围内。纯薄膜的电导率从1.1 $ MUL 10 $ + $ MIN @ 5 $ /降至4.4 $ MUL 10 $ + $ MIN @ 6 $ / ohm $ + $ MIN @ 1 $ / cm $ + $ MIN @ 1 $ /与沉积温度。高温区域的活化能为0.33 eV，而低温区域的活化能比价带高0.06 eV。在掺银膜中，电导率增加了一个数量级。 Ag掺杂含量使光带隙从2.23 eV降低到2.18 eV！6
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