The MOS controlled super junction transistor (SJBT): a new, highly efficient, high power semiconductor device for medium to high voltage applications

摘要

The paper presents a new MOS controlled silicon power device with columnar super junction structures. The super junction bipolar transistor (SJBT) is an extension of the super junction MOSFET principle: due to it's p-emitter at the anode the device is bipolar in nature albeit with substantially different characteristics as compared to an IGBT. It's electrical performance rivals advanced trench IGBTs.