Shot noise behavior in single-electron quantum dot-based structures

摘要

The 3D Monte Carlo simulation of an Si dot-based double-tunnel junction shows not only the possibility of shot noise suppression down to the Fano factor of 0.5, but also of super-Poissonian noise in the case of multi-state process. The counting statistics of the tunneling events provides a clear interpretation of the different noise regimes according to the balance between the different tunneling rates involved.