Department of Chemical Engineering, University of Florida, Gainesville FL 32611;
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611;
Department of Chemical Engineering, University of Florida, Gainesville FL 32611;
Department of Chemical Engineering, University of Florida, Gainesville FL 32611;
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611;
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611;
Department of Chemical Engineering, University of Florida, Gainesville FL 32611;
Department of Physics, Arizona State University, Tempe, AZ 85287;
Department of Physics, Arizona State University, Tempe, AZ 85287;
Department of Physics, Arizona State University, Tempe, AZ 85287;
机译:利用低频噪声光谱研究AlGaN / GaN高电子迁移率晶体管中高栅极电场效应的器件可靠性
机译:利用低频噪声光谱研究AlGaN / GaN高电子迁移率晶体管中高栅极电场效应的器件可靠性
机译:AlN中间层对在邻近衬底上生长的N极AlGaN / GaN金属-绝缘体-半导体-高电子迁移率晶体管的各向异性电子迁移率和器件特性的影响
机译:装置尺寸,衬底温度和浇口金属化对AlGaN / GaN高电子迁移率晶体管的可靠性的影响
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
机译:alGaN / GaN高电子迁移率晶体管的三维稳态和瞬态全耦合电热模拟:横向散热和栅极指间热串扰的影响
机译:结合GaN衬底热边界电阻的氮化镓(GaN)高电子迁移率晶体管(HEmT)器件的混合多栅模型。