首页> 外文会议>Compound Semiconductor Week >Synchrotron X-Ray Topography Observation and Classification of Dislocations in
【24h】

Synchrotron X-Ray Topography Observation and Classification of Dislocations in

机译:X射线同步辐射形貌观察与晶体中位错分类。

获取原文

摘要

substrates have been studied in details by using synchrotron X-ray topography (XRT), chemical etching and transmission electron microscopy. Focus has been placed on accurate detection and classification of dislocations over a large sample area by their burgers vectors. By analyzing XRT contrast change of a same dislocation observed under varying diffraction conditions in terms of g-vector, burgers vector of the dislocation can be deduced. In this way, types of dislocations and their distribution over a large sample area were obtained. In addition, chemical etching and TEM were applied to study the structural properties of dislocations of interest in details.
机译:通过使用同步加速器X射线形貌(XRT),化学蚀刻和透射电子显微镜对衬底进行了详细研究。重点已放在汉堡包矢量对大样本区域中位错的准确检测和分类上。通过分析在不同衍射条件下根据g矢量观察到的同一位错的XRT对比度变化,可以推导出位错的汉堡矢量。以此方式,获得了位错的类型及其在大样品区域上的分布。另外,化学蚀刻和透射电镜被用于详细研究感兴趣的位错的结构特性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号