Synchrotron X-Ray Topography Observation and Classification of Dislocations in $eta$-Ga2O3 single crystal substrates grown by EFG

摘要

Dislocations in EFG-grown $eta$-Ga2O3 substrates have been studied in details by using synchrotron X-ray topography (XRT), chemical etching and transmission electron microscopy. Focus has been placed on accurate detection and classification of dislocations over a large sample area by their burgers vectors. By analyzing XRT contrast change of a same dislocation observed under varying diffraction conditions in terms of g-vector, burgers vector of the dislocation can be deduced. In this way, types of dislocations and their distribution over a large sample area were obtained. In addition, chemical etching and TEM were applied to study the structural properties of dislocations of interest in details.