650 V Dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS Fab

摘要

650 V dispersion-free enhancement-mode GaN-on-Si p-GaN HEMTs are demonstrated in a 200 mm CMOS-compatible process, for the first time. The threshold voltage of 36 mm-width power devices is 2.1 V, the output current is 8 A, and the on-resistance is 13 Ω-mm. The manufacturing challenges when maturing the technology from the research and development phase to a production environment are discussed.