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Numerical Analysis of Electromigration in Thin Film VLSI Interconnections

机译：薄膜VLSI互连中电迁移的数值分析

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摘要

Due to the continuing downscaling of the dimensions in VLSI circuits, electromigration is becoming a serious reliability hazard for the circuits. A software tool based on finite element has been developed to solve the two partial differential equations of the two particle vacancy/imperfection model. The simulation results of complex grains structures of Al thin film show a very good match with the experimental results.
机译：由于VLSI电路尺寸的不断缩小，电迁移正成为电路的严重可靠性隐患。开发了基于有限元的软件工具来求解两个粒子空位/缺陷模型的两个偏微分方程。 Al薄膜复杂晶粒结构的模拟结果与实验结果非常吻合。

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  • 来源
    《CAS'95 proceedings 》|1995年|327-330|共4页
  • 会议地点 Sinaia(RO);Sinaia(RO)
  • 作者

    V. Petrescu; T. Mouthaan; W. Schoenmaker; S. Angelescu; R. Vissarion; G. Dima; H. Wallinga; M.D. Profirescu;

  • 作者单位

    EDIL Laboratory, Department of Electronics and Telecommunications, 'Politehnica' University of Bucharest, Romania;

    MESA Research Institute, University of Twente, The Netherlands;

    ASP-TCAD Division, IMEC vzw. Leuven, Belgium;

    EDIL Laboratory, Department of Electronics and Telecommunications, 'Politehnica' University of Bucharest, Romania;

    EDIL Laboratory, Department of Electronics and Telecommunications, 'Politehnica' University of Bucharest, Romania;

    EDIL Laboratory, Department of Electronics and Telecommunications, 'Politehnica' University of Bucharest, Romania;

    MESA Research Institute, University of Twente, The Netherlands;

    EDIL Laboratory, Department of Electronics and Telecommunications, 'Politehnica' University of Bucharest, Romania;

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  • 正文语种 eng
  • 中图分类 半导体技术 ;
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