EXTRACTION OF THE SLOW OXIDE TRAP DENSITY IN MOS TRANSISTORS USING THE CHARGE PUMPING METHOD

摘要

It is shown that the charge pumping technique allows the study of the slow traps in the oxide of MOS transistors. The results on virgin devices are in agreement with those obtained on state-of-the-art MOS transistors. On virgin and stressed devices, they are in agreement with those obtained from drain current transient measurements.