NEW TYPE OF OPTOELECTRONIC DEVICES - FORWARD-BIASED LONG PHOTODIODES BASED ON GRADED III-V ALLOY COMPOUNDS

摘要

We have proposed and demonstrated three new types of injection forward-biased photodiodes with three different mechanisms of the photoresponse spectrum formation in graded p-n structures Al_xGa_(1-x)As with (a) grading in the band-gap only, (b) grading in the compensation of the graded band-gap base and (c) Γ-X intervalley crossover. In structures (a) and (b) the change in the injection current leads to a special photoresponse transformation from broad-band to exceedingly selective while the current sensitivity exceeds 10~2-10~3 A/W. Photoresponse in (c) structures has a double-peaked spectrum. Also it is possible to change the shape of the spectrum.