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首页> 外文会议>CAS'95 proceedings >LPCVD SiO_2 LAYERS PREPARED FROM SiH_4 AND O_2 AT 450℃ IN A RTP
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LPCVD SiO_2 LAYERS PREPARED FROM SiH_4 AND O_2 AT 450℃ IN A RTP

机译：RTP于450℃SiH_4和O_2制备LPCVD SiO_2层

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摘要

In this paper experimental results of the silane oxidation kinetics in a rapid thermal low pressure chemical vapor deposition (RTLPCVD) cold wall reactor at 450℃ are presentedrnThe kinetics of SiO_2 films preparation is mainly controlled by a threshold partial pressure of silane which determines a sharp transition from no film formation to a high deposition rate.
机译：本文介绍了快速热低压化学气相沉积（RTLPCVD）冷壁反应器在450℃下硅烷氧化动力学的实验结果。SiO_2薄膜制备的动力学主要受硅烷阈值分压控制，该阈值决定了急剧的转变。从没有成膜到高沉积速率。

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  • 来源
    《CAS'95 proceedings》|1995年|319-322|共4页
  • 会议地点 Sinaia(RO);Sinaia(RO)
  • 作者

    Cornel Cobianu; Jan Bart Rem; Johan H. Klootwijk; Marcel H.H. Weusthof; Jisk Holleman; Pierre H. Woerlee;

  • 作者单位

    Institute of Microtechnology, P.O.Box 38-160, 72225 Bucharest, Romania;

    University of Twente, Department of Electrical Engineering, MESA Research Institute, P.O. Box 217, 7500 AE Enschede, The Netherlands;

    University of Twente, Department of Electrical Engineering, MESA Research Institute, P.O. Box 217, 7500 AE Enschede, The Netherlands;

    University of Twente, Department of Electrical Engineering, MESA Research Institute, P.O. Box 217, 7500 AE Enschede, The Netherlands;

    University of Twente, Department of Electrical Engineering, MESA Research Institute, P.O. Box 217, 7500 AE Enschede, The Netherlands;

    University of Twente, Department of Electrical Engineering, MESA Research Institute, P.O. Box 217, 7500 AE Enschede, The Netherlands;

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  • 正文语种 eng
  • 中图分类 半导体技术;
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