High density selective SiO_2: Si_3N_4 etching using stoichiometrically modified nitride etch stop layer

摘要

Si₃N₄SiO for ₂Is increased by adding a high concentration silicon nitride conformal charge during semiconductor chip fabrication. A high concentration silicon nitride conformal layer can be used in place of or in addition to the standard nitride conformal layer in the manufacturing process.