HIGH DENSITY SELECTIVE SIO2: SI3N4 ETCHING USING A STOICHIOMETRICALLY ALTERED NITRIDE ETCH STOP

摘要

The selectivity of SiO ₂ to Si ₃ N ₄ is increased by adding a high concentration silicon nitride conformal layer during semiconductor chip fabrication. High concentration silicon nitride conformal layers may be used in place of or in addition to standard nitride conformal layers in the manufacture.