Process for the production of LPCVD-Ta2O5 layers having low leakage current.

摘要

A process for fabricating electrodes for the capacitor dielectric of semiconductor memory devices with low leakage current characteristics is disclosed. The process comprises the steps of first depositing a titanium oxide film over a semiconductor silicon substrate. The deposited titanium oxide film is then annealed. A layer of tungsten nitride top electrode is then deposited on the annealed titanium oxide film. A second annealing procedure is then conducted to simulate post electrode high temperature process.