Department of Engineering, University of Cambridge 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK;
Department of Engineering, University of Cambridge 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK;
Department of Engineering, University of Cambridge 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK;
Department of Engineering, University of Cambridge 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK;
Department of Engineering, University of Cambridge 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK;
Department of Engineering, University of Cambridge 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK;
Department of Engineering, University of Cambridge 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK;
Department of Engineering, University of Cambridge 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK;
机译:通过控制ZnO薄膜生长的Vl / ll比并使用改良的薄膜晶体管层结构来改善金属有机化学气相沉积生长的ZnO薄膜晶体管的特性
机译:AG纳米线在ZnO量子点/ AG纳米线混合通道光薄膜晶体管中的双重作用
机译:基于未掺杂和掺有Hf和NaF的ZnO薄膜晶体管的非易失性存储器件,在ZnO和栅极绝缘体之间插入了Ag纳米线
机译:薄膜网络晶体管ZnO纳米线的合成
机译:使用不平衡磁控溅射制造适用于薄膜晶体管的掺镓ZNO薄膜。
机译:基于量子点/还原氧化石墨烯碎片修饰的ZnO纳米线的高性能光调制薄膜晶体管
机译:基于未掺杂和HF和NAF掺杂的ZnO薄膜晶体管的非易失性存储器,其中AG纳米线插入ZnO和栅极绝缘体界面之间