Dual role of Ag nanowires in ZnO quantum dot/Ag nanowire hybrid channel photo thin film transistors

摘要

High mobility and p-type thin film transistors (TFTs) are in urgent need for high-speed electronic devices. In this work, ZnO quantum dot (QD)/Ag nanowire (NW) channel TFTs were fabricated by a solution processed method. The Ag NWs play the dual role of dopant and providing the charge transfer route, which make the channel p-type and enhance its mobility, respectively. The best sample yields an on/off ratio (I-on/I-off) of 5.04 x 10(5), a threshold voltage (V-T) of 0.73 V, a high field effect mobility (mu(FE)) of 8.69 cm(2) V-1 s(-1), and a subthreshold swing (SS) of 0.41 V dec(-1). Owing to the strong ultraviolet (UV) absorption and photoinduced carrier separation ability of ZnO QDs and the fast carrier transport of Ag NWs, the devices acquire a high external quantum efficiency (EQE) and ultra-fast response under 365 nm UV illumination. The UV-modulated ZnO QD/Ag NW hybrid channel photo TFTs have potential for future application in optoelectronic devices, such as photodetectors and photoswitches.