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Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

机译：基于未掺杂和HF和NAF掺杂的ZnO薄膜晶体管的非易失性存储器，其中AG纳米线插入ZnO和栅极绝缘体界面之间

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Manoj Kumar; Hakyung Jeong; Dongjin Lee;
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1. Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface [J] . Manoj Kumar, Hakyung Jeong, Dongjin Lee RSC Advances . 2017,第44期

机译：基于未掺杂和掺有Hf和NaF的ZnO薄膜晶体管的非易失性存储器件，在ZnO和栅极绝缘体之间插入了Ag纳米线
2. Nonvolatile Memory Based On Sol-gel Zno Thin-film Transistors With Ag Nanoparticles Embedded In The Zno/gate Insulator Interface [J] . Dipti Gupta, Manish Anand, Seong-Wan Ryu, Applied Physicsletters . 2008,第22期

机译：基于Sol-gel Zno薄膜晶体管的非易失性存储器，该纳米晶体管具有嵌入在Zno /栅极绝缘体界面中的Ag纳米粒子
3. Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer [J] . Yoon SM, Yang SH, Park SHK, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2009,第24期

机译：ZnO沟道厚度对带有Al2O3和铁电聚合物双层栅极绝缘体的非易失性存储薄膜晶体管器件性能的影响
4. Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer [C] . Park C.H., Lee K.H., Lee B.H., Nanoelectronics Conference (INEC), 2010 . 2010

机译：具有聚合物铁电和薄缓冲层的ZnO基薄膜晶体管的非易失性存储特性
5. Development of ZnO-based thin film transistors and phosphorus-doped ZnO and (Zn, Mg)O by pulsed laser deposition. [D] . Li, Yuanjie. 2006

机译：通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和（Zn，Mg）O。
6. Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics [O] . Byoungjun Park, Kyoungah Cho, Sungsu Kim, 2011

机译：由柔性塑料上的ZnO薄膜晶体管组成的纳米浮栅存储器件
7. Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics [O] . Byoungjun Park, Kyoungah Cho, Sungsu Kim, 2010

机译：由柔性塑料上的ZnO薄膜晶体管组成的纳米浮栅存储器件
8. Ion-Irradiation-Induced Ferromagnetism in Undoped ZnO Thin Films. [R] . D. K. Avasthi J. Narayan J. T. Prater S. Mal S. Nori 2013

机译：非掺杂ZnO薄膜中离子辐照诱导的铁磁性。

Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

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