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Stealth Dicing technology with SWIR laser realizing high throughput Si wafer dicing

机译:采用SWIR激光的隐形切割技术实现高产量的硅晶片切割

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摘要

Stealth Dicing(SD) method is superior to blade dicing as well as other laser dicing methods such as laser ablation in terms of debris free and fully dry process. Therefore, SD is used to solve various problems in the dicing process, contributing to development of advanced devices and cost reduction. In this paper, we introduced a improved SD engine(SDE) that solves the problem that thick wafers, which have been pointed out as weak points of SD, require many laser scanning. The laser with the wavelength in the short wavelength infrared(SWIR) region was used and the spherical aberration that occurred when internal focusing of silicon was corrected by using LCoS-SLM. As a result, the crack propagation from the SD layer was significantly enhanced, achieving 3.5 times the throughput of the conventional SDE in a silicon wafer with 300 urn thickness.
机译:在无碎屑和完全干燥的过程中,Stealth Dicing(SD)方法优于刀片切割以及其他激光切割方法,例如激光烧蚀。因此,SD用于解决切割过程中的各种问题,有助于开发先进的设备并降低成本。在本文中,我们引入了一种改进的SD引擎(SDE),该引擎解决了被指出为SD薄弱点的厚晶片需要多次激光扫描的问题。使用具有在短波长红外(SWIR)区域中的波长的激光,并且通过使用LCoS-SLM校正了当硅的内部聚焦时发生的球差。结果,显着增强了从SD层的裂纹扩展,在厚度为300微米的硅晶片中,其通量达到了传统SDE的3.5倍。

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